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IRLTS6342PbF
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
BV DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
V GS = 0V, I D = 250 μ A
ΔΒ V DSS / Δ T J
Breakdown Voltage Temp. Coefficient
–––
23
–––
mV/°C Reference to 25°C, I D = 1mA
R DS(on)
V GS(th)
Δ V GS(th)
I DSS
I GSS
gfs
Q g
Q gs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
–––
–––
0.5
–––
–––
–––
–––
–––
25
–––
–––
14.0
17.5
–––
-4.3
–––
–––
–––
–––
–––
11
0.5
17.5
22.0
1.1
–––
1.0
150
100
-100
–––
–––
–––
m Ω
V
mV/°C
μ A
nA
S
nC
V GS = 4.5V, I D = 8.3A
V GS = 2.5V, I D = 6.7A
V DS = V GS , I D = 10 μ A
V DS = 24V, V GS = 0V
V DS = 24V, V GS = 0V, T J = 125°C
V GS = 12V
V GS = -12V
V DS = 10V, I D = 6.4A
V GS = 4.5V
V DS = 15V
Q gd
R G
t d(on)
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
–––
–––
–––
4.6
2.2
5.4
–––
–––
–––
Ω
I D = 6.4A
V DD = 15V, V GS = 4.5V
t r
t d(off)
t f
C iss
C oss
C rss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
11
32
15
1010
96
70
–––
–––
–––
–––
–––
–––
ns
pF
I D = 6.4A
R G = 6.8 Ω
See Figs. 18
V GS = 0V
V DS = 25V
? = 1.0MHz
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
–––
–––
2.0
64
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
13
5.8
1.2
20
8.7
V
ns
nC
T J = 25°C, I S = 8.3A, V GS = 0V
T J = 25°C, I F = 6.4A, V DD = 24V
di/dt = 100/ μ s
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
Junction-to-Ambient
–––
62.5
°C/W
Notes:
? Repetitive rating; pulse width limited by max. junction temperature.
? Pulse width ≤ 400 μ s; duty cycle ≤ 2%.
? When mounted on 1 ich square copper board.
? R θ is measured at T J of approximately 90°C.
2
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